Green CVD—Toward a sustainable philosophy for thin film deposition by chemical vapor deposition

BiVO4 thin film photoanodes grown by chemical vapor deposition.

BiVO4 thin film photoanodes were grown by vapor transport chemical deposition on FTO/glass substrates. By controlling the flow rate, the temperatures of the Bi and V sources (Bi metal and V2O5 powder, respectively), and the temperature of the deposition zone in a two-zone furnace, single-phase monoclinic BiVO4 thin films can be obtained. The CVD-grown films produce global AM1.5 photocurrent den...

Method for growing a diamond thin film on a substrate by plasma enhanced chemical vapor deposition

Gas phase chemical vapor deposition chemistry of triethylboron probed by boron-carbon thin film deposition and quantum chemical calculations

Mewlude Imam, Konstantin Gaul, Andreas Stegmueller, Carina Höglund, Jens Jensen, Lars Hultman, Jens Birch, Ralf Tonner and Henrik Pedersen, Gas phase chemical vapor deposition chemistry of triethylboron probed by boron-carbon thin film deposition and quantum chemical calculations, 2015, Journal of Materials Chemistry C, (3), 41, 10898-10906. http://dx.doi.org/10.1039/c5tc02293b Copyright: Royal...

Trimethylboron as Single-Source Precursor for Boron−Carbon Thin Film Synthesis by Plasma Chemical Vapor Deposition

Boron−carbon (BxC) thin films are potential neutron converting layers for B-based neutron detectors. However, as common material choices for such detectors do not tolerate temperatures above 500 °C, a low temperature deposition route is required. Here, we study trimethylboron B(CH3)3 (TMB) as a single-source precursor for the deposition of BxC thin films by plasma CVD using Ar plasma. The effec...

Synthesis of Boron-Aluminum Nitride Thin Film by Chemical Vapour Deposition Using Gas Bubbler

Boron included aluminium nitride (B-AlN) thin films were synthesized on silicon (Si) substrates through chemical vapour deposition ( CVD ) at 773 K (500 °C). tert-buthylamine (tBuNH2) solution was used as nitrogen source and delivered through gas bubbler. B-AlN thin films were prepared on Si-100 substrates by varying gas mixture ratio of three precursors. The structural properties of the films ...